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MMDT2222A - NPN Silicon Multi-Chip Transistor

Key Features

  • s Power dissipation PCM : 0.15 W (Tamp. = 25O C) .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 75 V C 1 B2 E2 .014(0.35) .006(0.15) .087(2.20) .079(2.00) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) Operating & Storage junction Temperature E 1 B1 C2 .043(1.10) .035(0.90) .039(1.00) .035(0.90) Tj, Tstg : -55OC~ +150OC Marking: K1P Dimen.

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Elektronische Bauelemente RoHS Compliant Product MMDT2222A NPN Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation PCM : 0.15 W (Tamp.= 25O C) .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 75 V C 1 B2 E2 .014(0.35) .006(0.15) .087(2.20) .079(2.00) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) Operating & Storage junction Temperature E 1 B1 C2 .043(1.10) .035(0.90) .039(1.00) .035(0.