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MMDT2227 - NPN-PNP Silicon Multi-Chip Transistor

Key Features

  • s SOT-363 Power dissipation PCM : 0.2 W (Tamp. = 25 OC) Collector current ICM : 0.2/-0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .018(0.46) .010(0.26) C2 B1 E1 .043(1.10) .035(0.90) 8o 0o .053(1.35) .045(1.15) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) E2 B2 C1 Dimension.

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Elektronische Bauelemente MMDT2227 NPN-PNP Silicon Multi-Chip Transistor RoHS Compliant Product * Features SOT-363 Power dissipation PCM : 0.2 W (Tamp.= 25 OC) Collector current ICM : 0.2/-0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .018(0.46) .010(0.26) C2 B1 E1 .043(1.10) .035(0.90) 8o 0o .053(1.35) .045(1.15) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.