SeCoS Halbleitertechnologie GmbH MPS651
NPN Plastic Encapsulated Transistor
FEATURES
Switching and AmplifierAPPLICATIONS
G TO-92 H 3 Base Collector 2 1 Emitter J AD B K E CF REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC Pc TJ, TSTG RATINGS 80 60 5 2 0.625 150, -55~150 UNIT V V V A W °CELECTRICAL CHARACTERISTICS
(TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Transition Frequency SYMBOL V(BR)CBO V(BR)CEO* V(BR)EBO ICBO IEBO HFE(1) * HFE(2) * HFE(3) * HFE(4) * VCE(sat) * VBE(sat) * VBE(on) * fT MIN.