SeCoS Halbleitertechnologie GmbH MPS751
PNP Plastic Encapsulated Transistor
FEATURES
Switching and amplifier applications TO-92 2 Base Collector 3 1 Emitter 1Emitter 2Base 3Collect REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 14.5 3.30 3.81 0.36 0.56 REF. F G H J Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Continuous Collector Current IC Collector Dissipation PC Thermal Resistance from Junction to Ambient RθJA Junction and Storage Temperature TJ, TSTG Rating -80 -60 -5 -2 625 200 150, -55~150 Unit V V V A mW °C / W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector to Base Breakdown Voltage V(BR)CBO Collector to E