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SCG2019 - P-Channel Enhancement Mode MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Vol

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SCG2019 -0.62A , -20V , RDS(ON) 810 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage APPLICATION  DC-DC converter circuit  Load Switch MARKING P9   = Date Code PACKAGE INFORMATION Package MPQ SOT-523 3K Leader Size 7 inch SOT-523 A M 3 Top View CB 1 2 K L E 3 1 2 D F G H J REF. A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.7 0.9 0.7 0.9 0.9 1.1 0.15 0.