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SCG4153 Datasheet PDF

SeCoS Halbleitertechnologie GmbH SCG4153

N-Channel Enhancement Mode MOSFET

Part No. SCG4153
Datasheet SCG4153 Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description N-Channel Enhancement Mode MOSFET
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SCG4153 datasheet page 1 preview

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

MECHANICAL DATA

Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING N3 = Date Code SOT-523 A M 3 Top View CB 1 2 K L E 3 1 2 D F G H J REF. A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.7 0.9 0.7 0.9 0.9 1.1 0.15 0.35 REF. G H J K L M Millimeter Min. Max. - 0.1 0.55 REF. 0.1 0.2 - 0.5 TYP. 0.25 0.325 Top View PACKAGE INFORMATION Package MPQ SOT-523 3K Leader Size 7 inch

MAXIMUM RATINGS

(TA = 25°C unless otherwise specified) Parameter Symbol Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 1 TA= 25°C TA= 70°C Power Dissipation 1 TA= 25°C TA= 70°C Continuous Drain Current 2 TA= 25°C TA= 70°C Power Dissipation 2 Pulsed Drain Current 3 TA= 25°C TA= 70°C Lead Temperature Operating Juncti...
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