Datasheet Summary
Elektronische Bauelemente
0.8A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET
RoHS pliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
MECHANICAL DATA
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit Load Switch
MARKING
N3
= Date Code
SOT-523
Top View
1 2
REF.
A B C D E F
Millimeter
Min. Max.
1.45...