SeCoS Halbleitertechnologie GmbH SCG4153
N-Channel Enhancement Mode MOSFET
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.MECHANICAL DATA
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING N3 = Date Code SOT-523 A M 3 Top View CB 1 2 K L E 3 1 2 D F G H J REF. A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.7 0.9 0.7 0.9 0.9 1.1 0.15 0.35 REF. G H J K L M Millimeter Min. Max. - 0.1 0.55 REF. 0.1 0.2 - 0.5 TYP. 0.25 0.325 Top View PACKAGE INFORMATION Package MPQ SOT-523 3K Leader Size 7 inchMAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 1 TA= 25°C TA= 70°C Power Dissipation 1 TA= 25°C TA= 70°C Continuous Drain Current 2 TA= 25°C TA= 70°C Power Dissipation 2 Pulsed Drain Current 3 TA= 25°C TA= 70°C Lead Temperature Operating Juncti...