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SCG4153 - N-Channel Enhancement Mode MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

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Elektronische Bauelemente SCG4153 0.8A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING N3 = Date Code SOT-523 A M 3 Top View CB 1 2 K L E 3 1 2 D F G H J REF. A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.7 0.9 0.7 0.9 0.9 1.1 0.15 0.35 REF. G H J K L M Millimeter Min. Max. - 0.1 0.55 REF. 0.1 0.2 - 0.5 TYP. 0.25 0.