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SCP60N03S-C - N-Channel MOSFET

General Description

SCP60N03S-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special processing technology for high ESD capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SCP60N03S-C 60A, 30V, RDS(ON) 4.2mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SCP60N03S-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.