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SDN2004S-C - Dual-N Channel Enhancement Mode Power MOSFET

General Description

The SDN2004S-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It is ESD protected.

This device is suitable for use as a Uni-directional or Bi-directional load switch, facilitated by its common-drain configuration.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

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SDN2007-C Dual-N Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SD 2004S-C 10A, 20V, RDS(O ) 9mΩ Dual- Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SDN2004S-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a Uni-directional or Bi-directional load switch, facilitated by its common-drain configuration. DFN2x3-6J MARKING 2004 Lot Code PACKAGE INFORMATION Package MPQ DFN2×3-6J 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SDN2004S-C Lead (Pb)-free and Halogen-free REF. A B C D E Millimeter Min. Max. 1.95 2.05 2.95 3.05 0.203 REF. 0.5 BSC. 0.7 0.8 REF. F G H I L Millimeter Min. Max. 0 0.05 0.2 0.3 1.45 1.55 1.65 1.