SJP110SN04-C Overview
Description
SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
| Part | SJP110SN04-C |
|---|---|
| Description | N-Channel Shielded Gate Trench Power MOSFET |
| Category | MOSFET |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Size | 250.56 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| A2SHB | HAOHAI | N-Channel MOSFET |
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |