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SJP110SN04-C - N-Channel Shielded Gate Trench Power MOSFET

General Description

SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SJP110SN04-C 110A, 40V, RDS(ON) 2.8mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation APPLICATIONS Networking Load Switch LED applications MARKING CJAC 110SN04 = Production Line Indication REF. A B C D E F G Millimeter Min. Max. 5.65 5.85 5.90 6.15 4.80 5.00 5.02 TYP. 0.38 0.576 3.25 3.58 1.10 1.39 REF. H I J K L M N Millimeter Min. Max.