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SJP110SN04-C Datasheet N-channel Shielded Gate Trench Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SJP110SN04-C 110A, 40V, RDS(ON) 2.

General Description

SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

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Key Features

  • High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation.

SJP110SN04-C Distributor