SJP110SN04-C Description
SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- Part: SJP110SN04-C
- Manufacturer: SeCoS Halbleitertechnologie GmbH
- Size: 250.56 KB
Related SeCoS Halbleitertechnologie GmbH Datasheets
| Part Number | Description |
|---|---|
| SJP110SN10J-C | N-Channel MOSFET |
| SJP65SN10J-C | N-Channel Enhancement Mode Power MOSFET |