SJP110SN04-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 110A, 40V, RDS(ON) 2.8mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J Features High density cell design for ultra low RDS(ON) Battery switch Load switch Good stability and uniformity with high EAS Excellent package for good heat dissipation APPLICATIONS Networking Load Switch LED applications MARKING CJAC 110SN04 = Production Line Indication REF. A B C D E F G Millimeter Min. Max. 5.65 5.85...