SJP110SN10J-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 110A, 100V, RDS(ON) 5m N-Channel Shielded Gate Trench Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SJP110SN10J-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J Features - High density cell design for ultra low RDS(ON) - High Power and current handing capability - Load switch - Good stability and uniformity with high EAS - Excellent package for good heat dissipation APPLICATIONS - SMPS and general purpose applications - Hard switched and high frequency circuits - Uninterruptible Power...