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SJP110SN10J-C - N-Channel MOSFET

General Description

SJP110SN10J-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • High density cell design for ultra low RDS(ON).
  • High Power and current handing capability.
  • Load switch.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SJP110SN10J-C 110A, 100V, RDS(ON) 5m N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SJP110SN10J-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES  High density cell design for ultra low RDS(ON)  High Power and current handing capability  Load switch  Good stability and uniformity with high EAS  Excellent package for good heat dissipation APPLICATIONS  SMPS and general purpose applications  Hard switched and high frequency circuits  Uninterruptible Power Supply  Power management MARKING CJAC 110SN10   = Production Line Indication REF.