SJP110SN10J-C Description
SJP110SN10J-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
SJP110SN10J-C Key Features
- High density cell design for ultra low RDS(ON)
- High Power and current handing capability
- Load switch
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
SJP110SN10J-C Applications
- High density cell design for ultra low RDS(ON)