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SJP110SN10J-C Datasheet N-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SJP110SN10J-C 110A, 100V, RDS(ON) 5m N-Channel Shielded Gate Trench Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen &.

General Description

SJP110SN10J-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

DFN5x6-8J

Key Features

  • High density cell design for ultra low RDS(ON).
  • High Power and current handing capability.
  • Load switch.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

SJP110SN10J-C Distributor