SJP65SN10J-C Description
SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- Part: SJP65SN10J-C
- Manufacturer: SeCoS Halbleitertechnologie GmbH
- Size: 241.65 KB
Related SeCoS Halbleitertechnologie GmbH Datasheets
| Part Number | Description |
|---|---|
| SJP110SN04-C | N-Channel Shielded Gate Trench Power MOSFET |
| SJP110SN10J-C | N-Channel MOSFET |