SJP65SN10J-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 65A, 100V, RDS(ON) 11mΩ N-Channel Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS High side switch in POL DC/DC converter Secondary side synchronous rectifier MARKING...