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SJP65SN10J-C - N-Channel Enhancement Mode Power MOSFET

General Description

SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SJP65SN10J-C 65A, 100V, RDS(ON) 11mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN5x6-8J FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS High side switch in POL DC/DC converter Secondary side synchronous rectifier MARKING CJAC 65SN10 = Production Line Indication REF. A B C D E F G Millimeter Min. Max. 5.65 5.85 5.