SJP65SN10J-C Overview
SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
SJP65SN10J-C datasheet by SeCoS Halbleitertechnologie GmbH.
| Part number | SJP65SN10J-C |
|---|---|
| Datasheet | SJP65SN10J-C-SeCoS.pdf |
| File Size | 241.65 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | N-Channel Enhancement Mode Power MOSFET |
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SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
View all SeCoS Halbleitertechnologie GmbH datasheets
| Part Number | Description |
|---|---|
| SJP110SN04-C | N-Channel Shielded Gate Trench Power MOSFET |
| SJP110SN10J-C | N-Channel MOSFET |