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SMG2306N - N-Channel MosFET

Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low gate charge.
  • Fast switching.
  • Miniature SC-59 surface mount package saves board space.

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Datasheet preview – SMG2306N

Datasheet Details

Part number SMG2306N
Manufacturer SeCoS
File Size 562.16 KB
Description N-Channel MosFET
Datasheet download datasheet SMG2306N Datasheet
Additional preview pages of the SMG2306N datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2306N 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low gate charge  Fast switching  Miniature SC-59 surface mount package saves board space. APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
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