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SMG2336N - N-Channel MosFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SC-59 saves board space.
  • Fast switching speed.
  • High performance trench technology.

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Datasheet preview – SMG2336N

Datasheet Details

Part number SMG2336N
Manufacturer SeCoS
File Size 443.23 KB
Description N-Channel MosFET
Datasheet download datasheet SMG2336N Datasheet
Additional preview pages of the SMG2336N datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2336N 5.3 A, 30 V, RDS(ON) 32 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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