Datasheet Details
| Part number | SMG2370N |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 138.42 KB |
| Description | N-Channel MosFET |
| Datasheet | SMG2370N-SeCoS.pdf |
|
|
Overview: Elektronische Bauelemente SMG2370N 1.8 A, 100 V, RDS(ON) 280 mī N-Channel Enhancement Mode Mos.
| Part number | SMG2370N |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 138.42 KB |
| Description | N-Channel MosFET |
| Datasheet | SMG2370N-SeCoS.pdf |
|
|
|
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printer , PCMCIA cards, cellular and cordless telephones.
| Part Number | Description |
|---|---|
| SMG2371P | P-Channel MosFET |
| SMG2300 | N-Channel MosFET |
| SMG2301 | P-Channel MosFET |
| SMG2301P | P-Channel MOSFET |
| SMG2302 | N-Channel MosFET |
| SMG2302N | N-Channel MOSFET |
| SMG2303 | P-Channel MosFET |
| SMG2304 | N-Channel MosFET |
| SMG2304A | N-Channel MosFET |
| SMG2305 | P-Channel MosFET |