The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMG3018K
Elektronische Bauelemente 640mA, 30V,RDS(ON)8£[
N-Channel Enhancement Mode Power Mos.FET
Description
The SMG3018K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG3018K is universally used for all commercial-industrial applications.
A L
3 Top View
SC-59 Dim A
B
1
Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40
Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.