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SMG3018K Datasheet N-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SMG3018K Elektronische Bauelemente 640mA, 30V,RDS(ON)8£[ N-Channel Enhancement Mode Power Mos.

General Description

The SMG3018K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device.

The SMG3018K is universally used for all mercial-industrial applications.

A L 3 Top View SC-59 Dim A B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 S 2 B C D G H J K D G

Key Features

  • RoHS Compliant.
  • Simple Drive Requirement.
  • Small Package Outline H Drain Gate Source C J K L S All Dimension in mm Marking : 3018E D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ± 20 640 500 950 1.38 0.01 Unit V V mA mA mA W W / oC o Total Power Dissipation Linear Derating Factor Operatin.

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SMG3018K Distributor