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SMG351AN - N-Channel MOSFET

Description

The SMG351AN uses advanced trench technology to provide excellent on-resistance with low gate change.

The device is suitable for use as a load switch or in PWM applications.

Features

  • Lower Gate Charge.
  • Small Package Outline H Drain Gate Source D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 ±20 3 10 1.38 0.01 -55 ~ +150 Value 90 Unit V V A A W W/ Thermal Data Parameter Thermal Resista.

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Datasheet Details

Part number SMG351AN
Manufacturer SeCoS
File Size 522.74 KB
Description N-Channel MOSFET
Datasheet download datasheet SMG351AN Datasheet

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Full PDF Text Transcription

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SMG351AN 3A, 30V,RDS(ON) 60m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L Description The SMG351AN uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. S 2 3 Top View SC-59 B 1 Dim A B C D J K Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.
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