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SMG4KN25-C - N-Ch Enhancement Mode Power MOSFET

General Description

The SMG4KN25-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Key Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG4KN25-C 0.37A, 250V, 4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG4KN25-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMG4KN25-C meet the RoHS and Green Product requirement with full function reliability approved.