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SMS2305R - P-Channel MOSFET

General Description

The device uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V.

This device is suitable for the use as a load switch or in PWM applications.

Key Features

  • High power and current handing capability Lead free product is available Surface mount package SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMS2305R -4.1A, -20V, RDS(O ) 52 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The device uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for the use as a load switch or in PWM applications. FEATURES High power and current handing capability Lead free product is available Surface mount package SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J APPLICATIONS PWM applications Load switch Power management REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 1.7 0.89 1.3 1.70 2.3 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.01 0.18 0.5 Typ. 0.08 0.20 0.6 REF. 0.95 BSC.