SMS2P02J-C Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION The SMS2P02J-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide Excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2P02J-C meet the Ro HS and Green Product requirement with full function reliability approved. FEATURES - Advanced High Cell Density Trench Technology - Super low Gate Charge - Green Device Available MARKING S1 SOT-23 PACKAGE INFORMATION Package SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2P02J-C Lead (Pb)-free and Halogen-free 1 3 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Total Power Dissipation Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance...