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SMS3099E-C - N-Ch Enhancement Mode Power MOSFET

Key Features

  • High Density Cell Design for Low RDS(ON).
  • Voltage Controlled Small Signal Switch.
  • Moisture Sensitivity Level 1.
  • ESD Protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMS3099E-C 1.1A, 30V, RDS(ON) 450mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High Density Cell Design for Low RDS(ON)  Voltage Controlled Small Signal Switch  Moisture Sensitivity Level 1  ESD Protected APPLICATION  Power Switching Application  Uninterruptible Power Supply  DC/DC Converter SOT-23 MARKING 3099. PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS3099E-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current TA=25°C 1.1 ID A TA=100°C 0.