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SPR12N10 - N-Channel Enhancement Mode Power MOSFET

General Description

The SPR12N10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SPR12N10 12A , 100V , RDS(ON) 112 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR12N10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. PR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 12N10 = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF.