SPR35N10S-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente SPR35 10S-C 35A, 100V, RDS(O ) 17mΩ -Channel Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR35N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPR35N10S-C meet the RoHS and Green Product requirement with full function reliability approved. Features Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING PR-8PP 35N10S = Date code PACKAGE INFORMATION Package PR-8PP 3K Leader Size 13 inch ORDER...