Datasheet4U Logo Datasheet4U.com

SPR35N10S-C Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

General Description

The SPR35N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SPR35N10S-C meet the RoHS and Green Product requirement with full function reliability approved.

Overview

Elektronische Bauelemente SPR35 10S-C 35A, 100V, RDS(O ) 17mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen &.

Key Features

  • Lower Gate Charge Advanced high cell density Trench technology Green Device Available.