SPR82N06S-C
SPR82N06S-C is N-Channel Shielded Gate Trench Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SPR82N06S-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SPR82N06S-C meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
- Shielded Gate Trench Technology
- Super Low Gate Charge
- Green Device Available
MARKING
PR-8PP
82N06S
= Date Code
PACKAGE INFORMATION
Package
PR-8PP
3K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
Lead (Pb)-free and Halogen-free S
REF.
A B C D E F
Millimeter Min. Max. 4.90 5.10 5.70 5.90 5.95 6.20
1.27 BSC. 0.35 0.49 0.10 0.20
REF.
G H I J K L
Millimeter Min. Max. 0.80 1.00
0.254 REF. 4.00 REF. 3.40 REF. 0.60 REF. 1.40 REF.
Mounting Pad Layout
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC=25°C...
