SPRD8503-C Datasheet (SeCoS Halbleitertechnologie GmbH)

Part SPRD8503-C
Description N & P-Ch Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer SeCoS Halbleitertechnologie GmbH
Size 1.20 MB
SeCoS Halbleitertechnologie GmbH

SPRD8503-C Overview

Description

The SPRD8503-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD8503-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced High Cell Density Trench Technology
  • Super Low Gate Charge
  • REF. H I J K L M N Millimeter Min. Max. 1.27 BSC. 3.61 3.96 0.51 0.71 0.41 0.61 0.33 0.51 0.2 0.3 0.9 1.1