SPT258N10SV-C
SPT258N10SV-C is N-Channel Shielded Gate Trench Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
FEATURES
- Shielded Gate Trench Technology
- High Speed Power Smooth Switching
- Enhanced Body diode dv/dt capability
- 100% UIS Tested, 100% Rg Tested
- Super Low Gate Charge
- Green Device Available
TOLL-8
MARKING
SPT 258N10SV
= Date Code
PACKAGE INFORMATION
Package
TOLL-8
2K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SPT258N10SV-C Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 4 (Silicon Limited)
TC=25°C
TC=100°C
TC=25°C Continuous Drain Current 1 (Package Limited)
TA=25°C
Pulsed Drain Current 2
Power Dissipation
TC=25°C...
