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SPT258N10SV-C Datasheet N-channel Shielded Gate Trench Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SPT258N10SV-C 258A, 100V, RDS(ON) 2.

Key Features

  • Shielded Gate Trench Technology.
  • High Speed Power Smooth Switching.
  • Enhanced Body diode dv/dt capability.
  • 100% UIS Tested, 100% Rg Tested.
  • Super Low Gate Charge.
  • Green Device Available TOLL-8.

SPT258N10SV-C Distributor