SPT258N10SV-C Description
Elektronische Bauelemente SPT258N10SV-C 258A, 100V, RDS(ON) 2.5mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free.
SPT258N10SV-C Key Features
- Shielded Gate Trench Technology
- High Speed Power Smooth Switching
- Enhanced Body diode dv/dt capability
- 100% UIS Tested, 100% Rg Tested
- Super Low Gate Charge
- Green Device Available