SPT258N10SV-C - N-Channel Shielded Gate Trench Power MOSFET

SeCoS Halbleitertechnologie GmbH

Key Features

Shielded Gate Trench Technology.
High Speed Power Smooth Switching.
Enhanced Body diode dv/dt capability.
100% UIS Tested, 100% Rg Tested.
Super Low Gate Charge.
Green Device Available TOLL-8.

SPT258N10SV-C n-channel shielded gate trench power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SPT258N10SV-C
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	603.37 KB
Description	N-Channel Shielded Gate Trench Power MOSFET
Datasheet	SPT258N10SV-C Datasheet

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Full PDF Text Transcription (Reference)

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Elektronische Bauelemente SPT258N10SV-C 258A, 100V, RDS(ON) 2.