SPT585N08SV-C
SPT585N08SV-C is N-Channel Shielded Gate Trench Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
FEATURES
- Shielded Gate Trench Technology
- High Speed Power Smooth Switching
- Enhanced Body diode dv/dt capability
- 100% UIS Tested, 100% Rg Tested
- Super Low Gate Charge
- Green Device Available
TOLL-8
MARKING
SPT 585N08SV
= Date Code
PACKAGE INFORMATION
Package
TOLL-8
2K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SPT585N08SV-C Lead (Pb)-free and Halogen-free
Gate
Drain
~
Source
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current 1 (Silicon Limited)
TC=100°C
Continuous Drain Current 1 (Package Limited)...
