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SSD09N65H-C Datasheet N-channel Super Junction Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SSD09N65H-C 9.1A, 650V, RDS(ON) 0.

General Description

The SSD09N65H-C is power MOSFET using Super Junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

These user friendly devices give an advantage of low EMI to designers as well as low switching loss, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Key Features

  • Advanced Super Junction Technology Super Low Gate Charge Green Device Available.

SSD09N65H-C Distributor