SeCoS Halbleitertechnologie GmbH SSD10N10J-C
The SSD10N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .| Part No. | SSD10N10J-C |
|---|---|
| Datasheet | SSD10N10J-C Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | N-Ch Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
TO-252(D-Pack)FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD10N10J-C Lead (Pb)-free and Halogen-freeABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current @VGS=10V 1 ID TC=100°C Pulsed Drain Current 2 IDM Total Power Dissipation 3 TC=25°C PD TA=25°C Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance Junction-Case 1 RθJC Maximum Thermal Resistance Junction-ambient 1 RθJA A B C D GE K HF N O P M J Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 2 Drain 1 Gate Rating 100 ±20 10 6.3 20 31 2 -55~150 3 Source Unit V V A A A W °C 4 °C / W 62 °C / W 02-Feb-2021 Rev.
