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SSD13P06-C - P-Channel Enhancement Mode Power MOSFET

General Description

The SSD13P06-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSD13P06-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced high cell density Trench technology Lower Gate Charge Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD13P06-C -13A , -60V , RDS(O ) 90mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSD13P06-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD13P06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Lower Gate Charge Green Device Available MARKING 13P06 = Date code PACKAGE INFORMATION Package MPQ TO-252 2.