SSD20P03-60
SSD20P03-60 is P-Channel MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable And battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. TO-252(D-Pack)
FEATURES
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Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.
PRODUCT SUMMARY
VDS(V) -30 PRODUCT SUMMARY RDS(on) m( 59@VGS= -10V 95@VGS= -4.5V
ID(A) 24 19
Gate
Drain
REF.
- http://..net/
Source
A B C D E F G H
Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a
SYMBOL VDS VGS ID @TA=25℃ IDM IS PD @TA=25℃ TJ, TSTG RθJA RθJC THERMAL RESISTANCE RATINGS
RATINGS -30 ±20 24 ±40 -30 50 -55 ~ 175 50 3.0
UNIT V V A A A W °C °C / W °C / W
Continuous Source Current (Diode Conduction) Total Power Dissipation a
Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient a Maximum Thermal Resistance Junction-Case
Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://.Se Co SGmb H./
Any changes of specification will not be informed individually.
18-May-2010 Rev. A
Page 1 of 4 datasheet pdf
- http://..net/
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 24A, -30V, RDS(ON) 59mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER SYMBOL MIN. Static Gate-Threshold Voltage Gate-Body Leakage Zero...
