SSD20P06-135D Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. TO-252(D-Pack) FEATURES - - - - Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.. PRODUCT SUMMARY VDS(V) -60 PRODUCT SUMMARY RDS(on) m( 135@VGS= -10V 190@VGS= -4.5V ID(A) 16 14  Gate  Drain REF. -  http://..net/ Source A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a UNIT V V A A A W °C °C / W °C / W VDS VGS ID IDM IS PD TJ, TSTG RθJA RθJC THERMAL RESISTANCE RATINGS a -60 ±20 16 ±40 -15 50 -55 ~ 175 50 3.0 Continuous Source Current (Diode Conduction) Total Power Dissipation Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient a Maximum Thermal Resistance Junction-Case Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://.Se Co SGmb H./ Any changes of specification will not be informed individually. 25-Aug-2010 Rev.B Page 1 of 4 datasheet pdf - http://..net/ Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)...