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SSD29N10J-C Datasheet N-Ch Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

General Description

The SSD29N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.

The SSD29N10J-C meet the RoHS and Green Product requirement with full function reliability approved.

Overview

Elektronische Bauelemente SSD29N10J-C 29A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen.

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available.