SSD29N10J-C
SSD29N10J-C is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSD29N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
The SSD29N10J-C meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
29N10
Date Code
PACKAGE INFORMATION
Package
TO-252
2.5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current @VGS=10V 1
TC=100°C
Pulsed Drain Current 4
Total Power Dissipation 3
TC=25°C PD
TA=25°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1 RθJA
Maximum Thermal Resistance Junction-Ambient 2
Maximum Thermal Resistance Junction-Case...
