SSD30N10J Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 30A, 100V, RDS(ON) 31mΩ N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently. It also offers a drain-to-source diode fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. TO-252(D-Pack) Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation MARKING...