SSD35P06-C - P-Channel MOSFET

Datasheet Summary

Description

The SSD35P06-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSD35P06-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

SeCoS

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Datasheet Details

Part number	SSD35P06-C
Manufacturer	SeCoS
File Size	313.43 KB
Description	P-Channel MOSFET
Datasheet	SSD35P06-C Datasheet
Additional preview pages of the SSD35P06-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSD35P06-C -35A, -60V, RDS(O ) 25mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD35P06-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD35P06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 35P06 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.

Published: Feb 4, 2019 |