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SSD40P04J - P-Channel MOSFET

General Description

SSD40P04J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is well suited for high current load applications.

Key Features

  • High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability.

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Full PDF Text Transcription for SSD40P04J (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSD40P04J. For precise diagrams, and layout, please refer to the original PDF.

Elektronische Bauelemente SSD40P04J -40A, -40V, RDS(ON) 14 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTIO...

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S Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD40P04J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications. FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS Power switching applications Hard switched and high frequency circuits Uninterruptible power supply MARKING CJU40P04 Date Code PACKAG

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