Description
The SSE04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
Features
- Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
1
Gate
2
Drain
3
Source
REF. A B C D E F G
Millimeter Min. Max. 9.3 10.6 14.2 16.5
2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8
REF. H I J K L M
Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.45.
SSE04N60SL Datasheet
