Datasheet4U Logo Datasheet4U.com

SSE04N60SL Datasheet N-ch Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SSE04N60SL 4A , 600V , RDS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen.

General Description

The SSE04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

TO-220P

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.45.

More Datasheets from SeCoS Halbleitertechnologie GmbH

Part Number Description
SSE04N65SL N-Ch Enhancement Mode Power MOSFET
SSE07N80SL N-Ch Enhancement Mode Power MOSFET
SSE08N60SL N-Ch Enhancement Mode Power MOSFET
SSE102N10SV-C N-Channel Enhancement Mode Power MosFET
SSE104N10-C N-Ch Enhancement Mode Power MOSFET
SSE105P03-C P-Channel Enhancement Mode Power MOSFET
SSE110N03-03P N-Channel Enhancement Mode MOSFET
SSE12N65SL N-Ch Enhancement Mode Power MOSFET
SSE133N12S-C N-Channel Shielded Gate Trench Power MOSFET
SSE14N65H-C N-Channel Super Junction Power MOSFET

SSE04N60SL Distributor