Description
The SSE07N80SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
Features
- Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
1
Gate
2
Drain
3
Source
REF. A B C D E F G
Millimeter
Min. Max. 9.3
10.6
14.2 16.5
2.7 BSC. 12.6 14.7
1.0
1.8
0.4
1.0
3.6
4.8
REF. H I J K L M
Millimeter
Min. Max. 2.54 BCS. 1.8
2.9
2.6 3.95
0.3
0.6
5.8
7.0
1.2 1.45.
SSE07N80SL Datasheet
