DESCRIPTION
TO-220P FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.45 ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 800 Gate-Source Voltage VGS ±30 TC=25°C 7 Continuous Drain Current ID TC=100°C 4.4 Pulsed Drain Current IDM 28 Total Power Dissipation TC=25°C PD Derate above 25°C Single Pulse Avalanche Energy 1 EAS 154 1.23 534 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 62.5 Maximum Thermal Resistance Junction-Case Notes: 1. L=30mH,IAS=5.5A, VDD=135V, RG=20Ω, Starting TJ =25°C RθJC 0.81 Unit V V A A A W mJ °C °C / W °C / W 15-Oct-2013 Rev.
SeCoS Halbleitertechnologie GmbH
