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SSE102N10SV-C - N-Channel Enhancement Mode Power MosFET

General Description

The SSE102N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Key Features

  • Shielded Gate Trench Technology.
  • High Speed Power Switching.
  • Super Low Gate Charge.
  • Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSE102N10SV-C 102A, 100V, RDS(ON) 8.8mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE102N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE102N10SV-C meet the RoHS and Green Product requirement with full function reliability approved. TO-220 FEATURES  Shielded Gate Trench Technology  High Speed Power Switching  Super Low Gate Charge  Green Device Available MARKING 102N10SV  =Date Code ORDER INFORMATION 1 Gate Part Number Type SSE102N10SV-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF.