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SSE104N10-C - N-Ch Enhancement Mode Power MOSFET

General Description

The SSE104N10-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge 100% EAS Guaranteed Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSE104 10-C 104A, 100V, RDS(O ) 12mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE104N10-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE104N10-C meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO-220 FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge 100% EAS Guaranteed Green Device Available MARKING 104N10 Date Code 1 ORDER INFORMATION Gate Part Number Type SSE104N10-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min.