SSE110N03-03P Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 110A , 30V , RDS(ON) 2.5mΩ N-Channel Enhancement Mode MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. TO-220P Features Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products...