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SSE110N03-03P Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SSE110N03-03P Elektronische Bauelemente 110A , 30V , RDS(ON) 2.

General Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

D C TO-220P B R T

Key Features

  • Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switching speed. High performance trench technology. G E A S F H I J K L U X M P.

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