SSE110N03-03P Datasheet (SeCoS Halbleitertechnologie GmbH)

Part SSE110N03-03P
Description N-Channel Enhancement Mode MOSFET
Category MOSFET
Manufacturer SeCoS Halbleitertechnologie GmbH
Size 121.36 KB
SeCoS Halbleitertechnologie GmbH

SSE110N03-03P Overview

Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Low Thermal impedance copper leadframe TO-220P saves board space
  • Fast Switching speed
  • High performance trench technology
  • G E A S F H I J K L U X M P