SSE110N03-03P Description
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
- Part: SSE110N03-03P
- Manufacturer: SeCoS Halbleitertechnologie GmbH
- Size: 121.36 KB
Related SeCoS Halbleitertechnologie GmbH Datasheets
| Part Number | Description |
|---|---|
| SSE102N10SV-C | N-Channel Enhancement Mode Power MosFET |
| SSE104N10-C | N-Ch Enhancement Mode Power MOSFET |
| SSE105P03-C | P-Channel Enhancement Mode Power MOSFET |
| SSE12N65SL | N-Ch Enhancement Mode Power MOSFET |
| SSE133N12S-C | N-Channel Shielded Gate Trench Power MOSFET |