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SSE133N12S-C - N-Channel Shielded Gate Trench Power MOSFET

General Description

The SSE133N12S-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSE133N12S-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Shielded Gate Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSE133N12S-C 133A, 120V, RDS(ON) 7mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE133N12S-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE133N12S-C meet the RoHS and Green Product requirement with full function reliability approved. TO-220 FEATURES  Shielded Gate Trench Technology  Super Low Gate Charge  Green Device Available MARKING 133N12S  = Date Code ORDER INFORMATION Part Number Type 1 Gate SSE133N12S-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.70 10.60 14.22 16.50 2.