SSE166N10SV-C
SSE166N10SV-C is N-Channel Shielded Gate Trench Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSE166N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSE166N10SV-C meet the Ro HS and Green Product requirement with full function reliability approved.
TO-220
FEATURES
Shielded Gate Trench Technology High Speed Power Switching Super Low Gate Charge Green Device Available
MARKING
166N10SV
=Date Code
ORDER INFORMATION
Gate
Part Number
Type
SSE166N10SV-C Lead (Pb)-free and Halogen-free
Drain
Source
REF.
A B C D E F G
Millimeter
Min. Max.
9.70 10.60
14.22 16.5
2.54. 3.40
12.7 14.7
1.17 1.78
3.60 4.82
REF.
H I J K L M
Millimeter
Min. Max.
2.54 TYP.
2.03 2.92
2.70 3.30
0.33...
