SSE55N03 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 55 A, 25 V, RDS(ON) 6 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE55N03 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features z z z z Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching PACKAGE DIMENSIONS REF. A b c D .DataSheet.co.kr Millimeter Min. Max. 4.40 0.76 0.36 8.60 9.80 14.7 6.20 4.80 1.00 0.50...