SSE80N06-C
SSE80N06-C is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSE80N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSE80N06-C meet the Ro HS and Green Product requirement with full function reliability approved.
TO-220
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
80N06
=Date Code
ORDER INFORMATION
Part Number
Type
SSE80N06-C Lead (Pb)-free and Halogen-free
REF.
A B C D E F G
Millimeter
Min. Max.
9.70 10.60
14.22 16.5
2.54. 3.40
12.7 14.7
1.17 1.78
3.60 4.82
REF.
H I J K L M
Millimeter
Min. Max.
2.54 TYP.
2.03 2.92
2.70 3.30
0.33 0.65
1.20 1.40
Drain
Gate...
