Datasheet Details
| Part number | SSE90N06-10P |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 225.96 KB |
| Description | N-Channel Enhancement Mode MosFET |
| Datasheet | SSE90N06-10P_SeCoS.pdf |
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Overview: SSE90N06-10P Elektronische Bauelemente 90 A, 60 V, RDS(ON) 9.9 m N-Channel Enhancement Mode Mos.
| Part number | SSE90N06-10P |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 225.96 KB |
| Description | N-Channel Enhancement Mode MosFET |
| Datasheet | SSE90N06-10P_SeCoS.pdf |
|
|
|
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.
D C TO-220P B R E G A T S TYPICAL APPLICATIONS Low RDS(on) Provides Higher Efficiency and Extends Battery Life.
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