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SSE90N10-14 - N-Channel Enhancement Mode MosFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • E G A T S.
  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. F H I J K L X M U P N.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSE90N10-14 Elektronische Bauelemente 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. D C TO-220P B R FEATURES  E G A T S    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. F H I J K L X M U P N APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N-Channel D2 www.