SSE9575 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET DESCRIPTION The SSE9575 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features z z z Simple Drive Requirement Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS REF. A b c D E L4 .DataSheet.co.kr Millimeter Min. Max. 4.40 0.76 0.36 8.60 9.80 14.7 6.20 4. 80 1.00 0.50 9.00 10.4 15.3 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25...