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SSG12N03 - N-Channel MOSFET

General Description

The SSG12N03 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

Key Features

  • Low on-resistance.
  • Simple Drive Requirement.
  • Double-N MosFET Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSG12N03 12A, 30V, RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG12N03 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. SOP-8 B FEATURES  Low on-resistance  Simple Drive Requirement  Double-N MosFET Package MARKING CODE 12N03SC    = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.