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SSG4362N Datasheet N-ch Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SSG4362N 18.6 A, 30 V, RDS(ON) 6 mī—ī€  N-Ch Enhancement Mode Power.

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SOP-8 saves board space.
  • Fast switching speed.
  • High performance trench technology.

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