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SSG4362N

Manufacturer: SeCoS Halbleitertechnologie GmbH

SSG4362N datasheet by SeCoS Halbleitertechnologie GmbH.

SSG4362N datasheet preview

SSG4362N Datasheet Details

Part number SSG4362N
Datasheet SSG4362N-SeCoS.pdf
File Size 504.98 KB
Manufacturer SeCoS Halbleitertechnologie GmbH
Description N-Ch Enhancement Mode Power MOSFET
SSG4362N page 2 SSG4362N page 3

SSG4362N Overview

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.

SSG4362N Key Features

  • Low RDS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe SOP-8 saves board space
  • Fast switching speed
  • High performance trench technology
  • 55 ~ 150
  • Gate-Body Leakage
  • Drain-Source On-Resistance 1
  • 0.7 Dynamic 2

SSG4362N Applications

  • Low RDS(on) provides higher efficiency and extends battery life
SeCoS Halbleitertechnologie GmbH logo - Manufacturer

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