SSI20N5E-C Description
Elektronische Bauelemente SSI20N5E-C 0.56A, 20V, RDS(ON) 450mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI20N5E-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSI20N5E-C meet the RoHS and...
SSI20N5E-C Key Features
- Advanced High Cell Density Trench Technology
- Super Low Gate Charge
- Green Device Available